Samsung Galaxy S8 Updates – Samsung to Make All Snapdragon 830 Chipsets

Samsung Galaxy S8

Samsung Galaxy S8 is expected to be one of the biggest announcements of 2017 as far as the smartphone world is concerned.

The phone could probably be here earlier than usual, especially if the Galaxy Note 7 woes continue as it is. With the launch date expected to be somewhere in February next year, details of the phone have started coming in really fast.

Just recently, it emerged that Samsung Galaxy S8 might follow Apple’s route in dropping the 3.5mm headphone jack and opt for a proprietary connector like the Lightning Connector on the iPhone 7 and iPhone 7 Plus. It has also been pointed out that Samsung could include a UHD screen on both the Galaxy S8 and S8 Edge, with a similar screen having already been showcased at an earlier event this year, but it only featured the 5.5-inch panel.

Samsung is also reported to be working on a successor to the Exynos 8890 processor used on the Galaxy S7, Galaxy S7 Edge and Galaxy Note 7. The chipset, dubbed Exynos 8895, will reportedly be made using the company’s 10nm process. With this technology currently boasted by Samsung alone, it is reported that Qualcomm will be using the South Korean tech giant to manufacture the entirety of its 2017 Snapdragon 830 chipset.

Galaxy S8 4K Display

This is an interesting development that has been put forward by the Korean Electronic Times, but the publication doesn’t mention the sources of the information. In addition to manufacturing the Snapdragon 830 SoC, Samsung has also struck a deal to have the processor on half of its 2017 Samsung Galaxy S8 and Galaxy S8 Edge handsets.

In January, Samsung reported that it also took charge of the Snapdragon 820 SoC – a deal which earned the tech giant over $1 billion. If this new deal is also struck, Samsung could pocket an even larger amount of money from Qualcomm. As for now, it is not yet fully confirmed, but more details of the deal should be coming in as we edge closer to the release of the Galaxy S8.

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